|
The device is designed for ion-beam deposition
process of DLC from hydrocarbon and dopant materials.
Main parameters of the device:
Base pressure in chamber: 4·10-4
Pa
Pressure during DLC synthesis: (1-2)·10-2
Pa
Accelerating potential of ion-beam source: max. 2 kV
Ion beam currentdensity: 0.05 – 0.25 mA/cm2
Current of solenoid: 6A
Gases:
both inert and reactive gases can be used. |
